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mobility-model-constant

The constant mobility model is due to lattice scattering (phonon scattering) and depends only on the temperature. The lattice atoms oscillate about their equilibrium sites at finite temperature leading to a scattering of carriers which results in a temperature dependent mobility µconst. µL is the mobility due to bulk phonon (lattice) scattering. For all semiconductors the temperature dependent lattice mobility is modeled by a power law.

The parameter values used in this model for electrons and holes, respectively, are taken from the PhD thesis of V. Palankovski "Simulation of Heterojunction Bipolar Transistors" (TU Vienna). (Note: The exponents n-gamma-lattice-temp, p-gamma-lattice-temp have opposite sign in his PhD thesis.)

In this model the mobility is constant and depends only on the temperature T. The parameters in the database are given for electrons and holes.

     µconst(T) = µL (T/T0)-gamma

 

Parameter in formula Description Input parameter
electrons holes   electrons holes
µnL µpL bulk phonon mobility n-mu-lattice-temp p-mu-lattice-temp
gamman gammap temperature dependence exponent n-gamma-lattice-temp p-gamma-lattice-temp
T T lattice temperature
T0 T0 300 K

Note: Different sign of the exponent 'gamma' as in MINIMOS documentation.

 

!-------------------------------------------------------------!
$mobility-model-constant                             optional !
                                                              !
 material-name                       character       required !
 number-of-parameters                integer         required !
                                                              !
 n-mu-lattice-temp                   double          optional ! [cm2/Vs]
 n-gamma-lattice-temp                double          optional ! []
Note: Different sign as in MINIMOS documentation.
                                                              !
 p-mu-lattice-temp                   double          optional ! [cm2/Vs]
 p-gamma-lattice-temp                double          optional ! []
Note: Different sign as in MINIMOS documentation.
                                                              !
                                                              !
 n-bow-mu-lattice-temp               double          optional ! [cm2/Vs]
 n-bow-gamma-lattice-temp            double          optional ! []
                                                              !
 p-bow-mu-lattice-temp               double          optional ! [cm2/Vs]
 p-bow-gamma-lattice-temp            double          optional ! []
                                                              !
$end_mobility-model-constant                         optional !
!-------------------------------------------------------------!

 

Syntax

material-name = Si
Name of material to which this set of parameters applies. Name has to be listed in $default-materials.

number-of-parameters = 4
Control parameter if the number of parameters provided is the same as demanded.

 

The parameters are specified as shown in the tables above. There are two sets, one for electrons (n-) and one for holes (p-).

material-name        = Si
number-of-parameters = 4

n-mu-lattice-temp    = 1417d0   ! [cm2/Vs]  
DESSIS
n-gamma-lattice-temp = 2.5d0    ! []        
DESSIS

p-mu-lattice-temp    = 470.5d0  ! [cm2/Vs]  
DESSIS
p-gamma-lattice-temp = 2.5d0    ! []        
DESSIS

 

material-name        = Si
number-of-parameters = 4

n-mu-lattice-temp    = 1430d0   ! [cm2/Vs]  
PhD thesis V. Palankovski
n-gamma-lattice-temp = 2d0      ! []        
PhD thesis V. Palankovski but opposite sign

p-mu-lattice-temp    = 460d0    ! [cm2/Vs]  
PhD thesis V. Palankovski
p-gamma-lattice-temp = 2.18d0   ! []        
PhD thesis V. Palankovski but opposite sign

 

The specifiers containing "bow" are for alloys, i.e. ternaries.

   
Last modified: 09-Jun-2011