mobility-model-constant
The constant mobility model is due to lattice scattering
(phonon scattering) and depends only on the temperature. The
lattice atoms oscillate about their equilibrium sites at finite temperature
leading to a scattering of carriers which results in a temperature dependent
mobility µconst. µL is the mobility due to bulk
phonon (lattice)
scattering. For all semiconductors the temperature dependent lattice mobility is
modeled by a power law.
The parameter values used in this model for electrons and holes,
respectively, are taken from the PhD thesis of V. Palankovski "Simulation
of Heterojunction Bipolar Transistors" (TU Vienna). (Note: The
exponents n-gamma-lattice-temp, p-gamma-lattice-temp
have opposite sign in his PhD thesis.)
In this model the mobility is constant and depends only on the temperature T.
The parameters in the database are given for
electrons and holes.
µconst(T) = µL (T/T0)-gamma
| Parameter in
formula |
Description |
Input parameter |
| electrons |
holes |
|
electrons |
holes |
| µnL |
µpL |
bulk phonon mobility |
n-mu-lattice-temp |
p-mu-lattice-temp |
| gamman |
gammap |
temperature dependence exponent |
n-gamma-lattice-temp |
p-gamma-lattice-temp |
| T |
T |
lattice temperature |
|
|
| T0 |
T0 |
300 K |
|
|
Note: Different sign of the exponent 'gamma' as in MINIMOS documentation.
!-------------------------------------------------------------!
$mobility-model-constant
optional !
!
material-name
character
required !
number-of-parameters
integer
required !
!
n-mu-lattice-temp
double
optional ! [cm2/Vs]
n-gamma-lattice-temp
double
optional ! [] Note: Different sign as in
MINIMOS documentation.
!
p-mu-lattice-temp
double
optional ! [cm2/Vs]
p-gamma-lattice-temp
double
optional ! [] Note: Different sign as in
MINIMOS documentation.
!
!
n-bow-mu-lattice-temp
double
optional ! [cm2/Vs]
n-bow-gamma-lattice-temp
double
optional ! []
!
p-bow-mu-lattice-temp
double
optional ! [cm2/Vs]
p-bow-gamma-lattice-temp
double
optional ! []
!
$end_mobility-model-constant
optional !
!-------------------------------------------------------------!
Syntax
material-name = Si
Name of material to which this set of parameters
applies. Name has to be listed in
$default-materials.
number-of-parameters = 4
Control parameter if the number of parameters provided
is the same as demanded.
The parameters are specified as shown in the tables above. There are two
sets, one for electrons (n-) and one for holes (p-).
material-name
= Si
number-of-parameters = 4
n-mu-lattice-temp
= 1417d0 ! [cm2/Vs] DESSIS
n-gamma-lattice-temp =
2.5d0 ! []
DESSIS
p-mu-lattice-temp
= 470.5d0 ! [cm2/Vs] DESSIS
p-gamma-lattice-temp =
2.5d0 ! []
DESSIS
material-name
= Si
number-of-parameters = 4
n-mu-lattice-temp
= 1430d0 ! [cm2/Vs] PhD thesis V. Palankovski
n-gamma-lattice-temp =
2d0
! []
PhD thesis V. Palankovski but opposite sign
p-mu-lattice-temp
= 460d0 ! [cm2/Vs] PhD thesis V. Palankovski
p-gamma-lattice-temp =
2.18d0 ! []
PhD thesis V. Palankovski but opposite sign
The specifiers containing "bow" are for alloys, i.e.
ternaries.
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