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Auger-recombination

Please refer to the database section for $Auger-recombination for more details.

More information on the Physics: Auger recombination processes in semiconductor heterostructures

For devices with an extremely high carrier concentration the Auger process is the dominant recombination channel. The process involves three particles and therefore scales with the third power of the carrier densities.

The phonon-assisted Auger recombination rate, which plays an important role especially at high carrier injection, respectively high doping levels, will be modeled in the program by the following equation (see SIMBA manual for details):

 

RAug = Cn n ( p2 - ni2 ) +  Cp p ( n2 - ni2 )

 

Parameter Description Input parameter Units
Cn Parameter n-C [cm6/s]
Cp Parameter p-C [cm6/s]

 

!------------------------------------------------------!
$Auger-recombination                          optional !
                                                       !
 material-name                character       required !
 number-of-parameters         integer         required !
                                                       !
 n-C                          double          optional ! [cm6/s]
 p-C                          double          optional ! [cm6/s]
                                                       !
 n-bow-C                      double          optional ! [cm6/s]
 p-bow-C                      double          optional ! [cm6/s]
                                                       !
$end_Auger-recombination                      optional !
!------------------------------------------------------!

 

Syntax:

material-name        = GaAs
Name of material to which this set of parameters applies. Name has to be listed in $default-materials.

 

number-of-parameters = 2
Control parameter if the number of parameters provided is the same as demanded.

 

n-C                  = 1.0d-31   ! [cm6/s]
p-C                  = 1.0d-31   ! [cm6/s]

 

The parameters are specified as shown in the tables above. There are two sets, one for electrons (n-) and one for holes (p-).
For ternary alloys there are also bowing parameters possible (n-bow-/p-bow-).

 

Please refer to the database section for $Auger-recombination for more details.

   
Last modified: 09-Jun-2011