Auger-recombination
Please refer to the database section for
$Auger-recombination for more
details.
More information on the Physics:
Auger recombination processes in semiconductor heterostructures
For devices with an extremely
high carrier concentration the Auger process is the dominant recombination
channel. The process involves three particles and therefore scales with the
third power of the carrier densities.
The phonon-assisted Auger recombination rate, which plays an important role
especially at high carrier injection, respectively high doping levels, will be
modeled in the program by the following equation (see
SIMBA manual for details):
RAug = Cn n ( p2 - ni2
) + Cp p ( n2 - ni2
)
| Parameter |
Description |
Input parameter |
Units |
| Cn |
Parameter |
n-C |
[cm6/s] |
| Cp |
Parameter |
p-C |
[cm6/s] |
!------------------------------------------------------!
$Auger-recombination
optional !
!
material-name
character
required !
number-of-parameters integer
required !
!
n-C double
optional ! [cm6/s]
p-C
double
optional ! [cm6/s]
!
n-bow-C
double
optional ! [cm6/s]
p-bow-C
double
optional ! [cm6/s]
!
$end_Auger-recombination
optional !
!------------------------------------------------------!
Syntax:
material-name =
GaAs
Name of material to which this set of parameters applies. Name has to be
listed in $default-materials.
number-of-parameters = 2
Control parameter if the number of parameters provided
is the same as demanded.
n-C =
1.0d-31 ! [cm6/s]
p-C =
1.0d-31 ! [cm6/s]
The parameters are specified as shown in the tables above. There are two
sets, one for electrons (n-) and one for holes (p-).
For ternary alloys there are also bowing parameters possible (n-bow-/p-bow-).
Please refer to the database section for
$Auger-recombination for more
details.
|