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News
- 25-01-2010
- Extended Poisson-Boltzmann equation:
Potentials of mean force (PMF)
- 28-10-2009
-
Carrier statistics
of graphene sheets
- 22-10-2009
-
Transmission
through a 3D nanowire
- 10-09-2009
-
Intermediate-band solar cell (artificial quantum dot crystal)
- 21-08-2009
-
Strain effects in freestanding three-dimensional nitride nanostructures
- 23-04-2009
- 2D: Efficient method for the calculation of ballistic quantum transport -
The CBR method (2D example)
- 06-08-2008
- 3D:
Artificial
quantum dot crystal - Superlattice dispersion (minibands)
- 24-07-2008
- 1D:
k.p dispersion in bulk unstrained ZnS, CdS and CdSe (wurtzite)
- 17-05-2008
- 1D:
Piezoelectric field in InAs/GaAs QWs grown along the [111] orientation
- 28-04-2008
- 1D:
Transmission function
- NEGF
- 16-04-2008
- 3D:
Artificial atom
- Si QD with 6x6 k.p
- 16-04-2008
- 3D:
Single-electron transistor
- 20-03-2008
- 3D/2D:
Artificial atom
- 2D:
Fock-Darwin states of a 2D parabolic, anisotropic (elliptical) potential in a magnetic field
- 03-10-2007
-
Tight-binding band structure of graphene
- 26-Sep-2007
- 1D:
Capacitance-Voltage (C-V)
curve of a "metal"-insulator-semiconductor (MIS) structure
- 14-Sep-2007
- 1D:
Growth of
layers on strained (or stressed) substrates (biaxial and uniaxial)
- 30-Aug-2007
- 1D:
Strained AlAs QW - Crossover of ground states
- 22-Aug-2007
- 1D:
Self-consistent 6x6
k.p calculations of holes in strained Si/SiGe MOSFETs
- 21-Aug-2007
- 1D:
Mobility in two-dimensional electron gases (2DEGs)
- InSb, GaAs and InGaAs quantum wells
- 31-Jul-2007
- 1D:
Cascade solar cell
(AlGaAs/InGaAs tandem solar cell)
- 30-Jul-2007
- 1D:
Electron density of states (DOS)
of a GaAs quantum well and
1D:
hole density of states (DOS)
of a Si hole channel
- 13-Jul-2007
-
Tight-binding band structure of bulk materials (Empirical tight-binding
(sp3s*) band structure of GaAs, GaP and AlAs)
- 06-Apr-2007
- 1D/2D:
Vertically coupled quantum wires in a longitudinal magnetic field
- 30-Mar-2007
- 1D:
Optical
interband transitions in a quantum well - Matrix elements and selection rules
- 2D:
Exciton correction in
quantum wires
- 09-Feb-2007
- 3D:
QD molecule
- 12-Jan-2007
- 1D:
Poisson equation (for
different charge density profiles)
- 1D:
Resistance in bulk n-type
doped silicon
- 18-Dec-2006
- 1D:
Ballistic current in a resonant tunneling diode (RTD)
- 07-Dec-2006
- 1D:
Electron concentration in doped semiconductors (Si, Ge, GaAs) - Compensated
semiconductors
- 24-Nov-2006
- 3D:
Biexciton correction in
idealistic 3D cubic quantum dots
- 15-Nov-2006
A new tutorial is available:
Energy dispersion of a
cylindrically shaped GaN nanowire
- 01-Sep-2006
Some new tutorials are available:
Scattering times for electrons
in unbiased and biased single and multiple quantum wells
- 17-July-2006
Some new tutorials are available:
- 1D:
Parabolic quantum well
- 1D:
Poisson-Boltzmann
equation: The Gouy-Chapman solution
- 2D:
Landau levels
in bulk GaAs (magnetic field)
- 2D:
Fock-Darwin
states of a 2D parabolic potential (magnetic field)
- 3D:
Cleaved edge overgrowth quantum dots (CEO QDs)
- 02-May-2006
Some new tutorials are available:
- 1D:
p-Si / SiO2 / poly-Si structure (MOSFET with inversion channel
due to applied gate voltage)
- 1D:
InAs / In0.4Ga0.6Sb
superlattice dispersion with 8x8 k.p (type-II band alignment)
- 1D:
InAs / GaSb broken
gap quantum well (BGQW)
- 1D:
Intersubband
transitions in InGaAs/AlInAs multiple quantum well systems
- 1D:
Si/SiGe MODQW (Modulation Doped Quantum Well)
- 1D:
k||
dispersion of holes in a
GaN/AlGaN quantum well
- 1D:
Band gap of strained AlGaInP on GaAs substrate
- 2D:
Electron
wavefunctions of a 2D slice of a Triple Gate MOSFET
- 2D:
Double Gate MOSFET (quantum
mechanical calculation)
- 3D:
Nanocrystals
- 16-Sep-2004
Some new tutorials are available:
- 1D:
Optical absorption of an InGaAs quantum well
- 1D:
k.p dispersion in bulk GaAs
- 1D:
k.p dispersion in
strained GaN (wurtzite)
- 1D:
strained silicon
- 1D:
k|| dispersion of holes in unstrained and strained silicon inversion
layers
- 1D: Dispersion in infinite
superlattices: Minibands
- 1D: Single-band ('effective-mass') is a special case of 8x8 k.p ('8x8kp')
if the electrons are decoupled from the holes
Calculating the quantum mechanical
density within the single-band approximation and 8x8 k.p
self-consistently
Calculation of the quantum mechanical
density from the k.p dispersion (no self-consistency)
- 1D:
n-i-n Si resistor
- 1D:
Triangular
well
- 1D: Double quantum well
- 1D:
Quantum Confined Stark Effect
-
1D: Exciton correction in
1D quantum wells
- 1D:
Quantum Cascade
Laser
- 1D: Intraband
transitions
- 1D:
Schrödinger-Poisson
- 1D:
pn-junction
- BIO-1D:
Electrolyte Gate AlGaN/GaN Field Effect Transistor
as pH Sensor
- BIO-1D: Si-SiO2 electrolyte sensor
- BIO-1D:
Detection of proteins with a SOI (silicon-on-insulator) electrolyte sensor
- 2D:
Quantum corral
- 2D:
Double Gate MOSFET (Metal
Oxide Semiconductor Field Effect Transistor)
- 2D:
I-V curve of an n-doped and
n-i-n-doped Si
structure
- 2D:
Hole wavefunctions in a quantum wire
subjected to a magnetic field
- 1D/2D: I-V curve of an n-doped GaN single layer (available on request,
contact:
stefan.birner@nextnano.de)
- 2D:
Electron and hole wavefunctions in
a T-shaped quantum wire grown by CEO (cleaved edge overgrowth)
- 2D:
Electron and hole wavefunctions in
a strained T-shaped quantum wire grown by CEO (cleaved edge overgrowth)
- 3D:
Cubic and cuboidal shaped
quantum dots
- 3D: Hexagonal shaped GaN quantum dot embedded in AlN
(wurtzite)
- 3D: Exciton correction in
idealistic 3D cubic quantum dots
- 3D:
Energy levels in a
pyramidal shaped InAs/GaAs quantum dot including strain and piezoelectric
fields
- 12-Mar-2004
A new nextnano³ version is available for
download: nextnano3_2004_08_24
- 08-Apr-2004
A new 1D tutorial was added:
GaN/AlN wurtzite structure: Strain, piezo and pyroelectric charges
in wurtzite
- 12-Mar-2004
A new nextnano³ version is available for
download: nextnano3_2004_03_12
- 28-Jan-2004
In
Tutorial 1 (section about
input_file2.in) we added some new pictures because we had a bug in one
of the mobility routines.
- 24-Jan-2004
A new 1D tutorial was added:
Strain: Band shifts and splittings due to conduction and valence band
deformation potentials
- 16-Jan-2004
A new 1D tutorial was added:
Dispersion of holes in a quantum well
- 11-Jan-2004
We had inconsistent k.p parameters in our database (database.in)
for zincblende materials (only III-Vs, Si/Ge was correct). The correct values read:
6x6kp-parameters:
Lnew = Lold - 1
Mnew = Mold - 1
8x8kp-parameters:
L'new = L'old - 1
M'new = M'old - 1
restricted 8x8kp-parameters: L'new = L'old - 1
M'new = M'old - 1
For details see here:
Conversion of Luttinger parameters to Dresselhaus parameters.
- 12-Dec-2003
We had the wrong sign of the bowing
parameters for the pyroelectric polarization in our
database (bow-pyro-polarization
must be negative; applies to wurtzites only).
- 08-Dec-2003
Output of the hydrostatic-strain in 1D/2D/3D (hydrostatic-strain
= yes).
obelisc is now called
obelisk ($regions).
Fixed bug in SUBROUTINE
setup_density_of_state2D
for holes (leads to a spike in 2D hole
density).
Updated database for nitride parameters according to the paper of
I. Vurgaftman et al. (2003)
- 08-Jul-2003
Output of the effective mass tensor in 1D/2D/3D (effective-mass-tensor
= yes).
Outpuf of complex wave functions for 2D in single band Schrödinger equation (complex-wave-functions
= yes).
- 28-Apr-2003
New mobility models implemented ->
$mobility-models,
$mobility-model-simba,
$mobility-model-dar,
$mobility-model-lom,
$mobility-model-constant,
$mobility-model-masetti,
$mobility-model-arora,
$mobility-model-minimos.
- 07-Nov-2002
The documentation of the structure (layout of the source code) was revised.
Please have a look at it.
- 19-Sep-2002
We fixed a bug in
recombination.f90. Memory hit the wall when using
voltage-sweep and direct-recombination because a pointer
was not deallocated (subroutine direct_recombination).
- 06-Jul-2002
Now you can
convert AVS 2D/3D output
data to Origin format.
- 06-Jul-2002
New features include:
-
$numeric-control
- specify residual and max. no. of iterations for strain
calculation (2D/3D)
- allocate auxiliary Poisson matrix
- specify max. no. of iterations and additional eigenvalues for
1-band Schrödinger equation (2D/3D)
-
Strain tensor output
in simulation and crystal coordinate system (2D/3D).
- Output displacements for strain calculation
- Raw-strain in and out in 1D
-
separation-model
= edge_model is now called
edge-model
- obelisc
is now called
obelisk
- $raw-data-output is now called
$output-raw-data
- $grid-output is now called
$output-grid
- $geometry-output is now called
$output-geometry
- $material-output is now called
$output-material
- base_geometry is now called base-geometry
-
region_number is now called region-number
- AVS 2D output for
k.p dispersion in 1D
-
Optical absorption
in 1D
- Temperature dependent energy gaps using
Varshni parameters
- Temperature dependent
lattice constants
- Output for integrated density in 1D for each cluster/material and total
integrated density.
- New mobility models (Darwish, Lombardi, perpendicular
E field
dependence - for Si only )
- Further specifiers in
$output-material
- Fixed some output bugs in 2D (1-band Schrödinger)
- Beta test
versions are already available
- periodic boundary conditions for Schrödinger equation in 1D/2D/3D
- 2 different boundary conditions for Schrödinger equation in 2D possible (for
each direction)
- 3 different boundary conditions for Schrödinger equation in 3D possible (for
each direction)
- fixed bug in effective masses (1D/2D/3D_input_quantum_models.f90):
For L band, mij was taken instead of 1/mij. For growth
directions different to [100] effective masses were also wrong.
- fixed bug in
setup_quantumregion2D: quantumreg_num_dbleV
("3"
instead of "7")
- fixed bug in output routines for band structure and densities (wrong output
if device didn't start at z=0 nm)
- fixed bug in SUBROUTINE
get_deformation_pot_vb: DEALLOCATE(absdefpotcb,x)
was
missing and kp_k0_wz instead of kp_k0_zb.
- fixed bug in setup of Schrödinger matrix (Dirichlet boundary conditions) in
2D_setup_sg.f90
(and
3D), both magnetic and nonmagnetic
- fixed bug for pyrocharges when ohmic Poisson boundary conditions are applied
(2D for wurtzite)
Reason: Mapping of interfaces was wrong
- fixed bug in
get_mobility_tensor.f90
-> n-temp-dependence-E -> E0
was calculated
in a wrong way -> µ was wrong for electrons.
- 01-Jun-2002
New version nn3_010602 released!
New features:
- prints out
electric field in 3D
- new syntax for
strain
calculation
- 1D/2D/3D (3D without current)
- Windows executable optimized for speed (around 33% performance improvement)
-
Magnetic field
(2D/3D)
- Output file format
option in 2D/3D (resolution=all/average)
- added
band shift
option for 2D/3D
- reads in
doping
file profile in 2D and interpolates it onto simulation grid
- fixed bug in
normalize_principal_axes.f90 (only important for wurtzite)
- fixed bug in strain calculation, piezo output
- fixed another bug in strain calculation for 3D
- source code now divided into subdirectories
- improved database
- Tu, 08-Jan-2002
Input
file generator for 1D
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