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News
- 26-01-2012
Schrödinger equation of a two-dimensional core-shell structure
Hexagonal 2DEG - Two-dimensional electron gas in a delta-doped hexagonal
shaped GaAs/AlGaAs nanowire heterostructure
- 09-06-2011
- New update of the code released:
Download
- 07-06-2011
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Density in np-doped GaAs superlattice - Comparison of classical, quantum, k.p and
full-band density k.p approach for normal and broken gap alignment
- 24-05-2011
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Density in n-doped GaAs - Comparison of classical, quantum,
k.p and
full-band density k.p approach
- 09-03-2010
- New feature: alloy sweep (sweep over
alloy concentration)
$alloy-function
- 25-01-2010
- Extended Poisson-Boltzmann equation:
Potentials of mean force (PMF)
- 28-10-2009
-
Carrier statistics
of graphene sheets
- 22-10-2009
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Transmission
through a 3D nanowire
- 10-09-2009
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Intermediate-band solar cell (artificial quantum dot crystal)
- 21-08-2009
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Strain effects in freestanding three-dimensional nitride nanostructures
- 23-04-2009
- 2D: Efficient method for the calculation of ballistic quantum transport -
The CBR method (2D example)
- 06-08-2008
- 3D:
Artificial
quantum dot crystal - Superlattice dispersion (minibands)
- 24-07-2008
- 1D:
k.p dispersion in bulk unstrained ZnS, CdS and CdSe (wurtzite)
- 17-05-2008
- 1D:
Piezoelectric field in InAs/GaAs QWs grown along the [111] orientation
- 28-04-2008
- 1D:
Transmission function
- NEGF
- 16-04-2008
- 3D:
Artificial atom
- Si QD with 6x6 k.p
- 16-04-2008
- 3D:
Single-electron transistor
- 20-03-2008
- 3D/2D:
Artificial atom - 2D:
Fock-Darwin states of a 2D parabolic, anisotropic (elliptical) potential in a magnetic field
- 03-10-2007
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Tight-binding band structure of graphene
- 26-Sep-2007
- 1D:
Capacitance-Voltage (C-V)
curve of a "metal"-insulator-semiconductor (MIS) structure
- 14-Sep-2007
- 1D:
Growth of
layers on strained (or stressed) substrates (biaxial and uniaxial)
- 30-Aug-2007
- 1D:
Strained AlAs QW - Crossover of ground states
- 22-Aug-2007
- 1D:
Self-consistent 6x6
k.p calculations of holes in strained Si/SiGe MOSFETs
- 21-Aug-2007
- 1D:
Mobility in two-dimensional electron gases (2DEGs)
- InSb, GaAs and InGaAs quantum wells
- 31-Jul-2007
- 1D:
Cascade solar cell
(AlGaAs/InGaAs tandem solar cell)
- 30-Jul-2007
- 1D:
Electron density of states (DOS)
of a GaAs quantum well and 1D:
hole density of states (DOS)
of a Si hole channel
- 13-Jul-2007
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Tight-binding band structure of bulk materials (Empirical tight-binding
(sp3s*) band structure of GaAs, GaP and AlAs)
- 06-Apr-2007
- 1D/2D:
Vertically coupled quantum wires in a longitudinal magnetic field
- 30-Mar-2007
- 1D:
Optical
interband transitions in a quantum well - Matrix elements and selection rules - 2D:
Exciton correction in
quantum wires
- 09-Feb-2007
- 3D:
QD molecule
- 12-Jan-2007
- 1D:
Poisson equation (for
different charge density profiles) - 1D:
Resistance in bulk n-type
doped silicon
- 18-Dec-2006
- 1D:
Ballistic current in a resonant tunneling diode (RTD)
- 07-Dec-2006
- 1D:
Electron concentration in doped semiconductors (Si, Ge, GaAs) - Compensated
semiconductors
- 24-Nov-2006
- 3D:
Biexciton correction in
idealistic 3D cubic quantum dots
- 15-Nov-2006
A new tutorial is available:
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Energy dispersion of a
cylindrically shaped GaN nanowire
- 01-Sep-2006
Some new tutorials are available:
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Scattering times for electrons
in unbiased and biased single and multiple quantum wells
- 17-July-2006
Some new tutorials are available: - 1D:
Parabolic quantum well - 1D:
Poisson-Boltzmann
equation: The Gouy-Chapman solution - 2D:
Landau levels
in bulk GaAs (magnetic field) - 2D:
Fock-Darwin
states of a 2D parabolic potential (magnetic field) - 3D:
Cleaved edge overgrowth quantum dots (CEO QDs)
- 02-May-2006
Some new tutorials are available: - 1D:
p-Si / SiO2 / poly-Si structure (MOSFET with inversion channel
due to applied gate voltage) - 1D:
InAs / In0.4Ga0.6Sb
superlattice dispersion with 8x8 k.p (type-II band alignment) - 1D:
InAs / GaSb broken
gap quantum well (BGQW) - 1D:
Intersubband
transitions in InGaAs/AlInAs multiple quantum well systems - 1D:
Si/SiGe MODQW (Modulation Doped Quantum Well) - 1D:
k||
energy
dispersion of holes in a
GaN/AlGaN quantum well - 1D:
Band gap of strained AlGaInP on GaAs substrate - 2D:
Electron
wave functions of a 2D slice of a Triple Gate MOSFET - 2D:
Double Gate MOSFET (quantum
mechanical calculation) - 3D:
Nanocrystals
- 16-Sep-2004
Some new tutorials are available: - 1D:
Optical absorption of an InGaAs quantum well - 1D:
k.p dispersion in bulk GaAs - 1D:
k.p dispersion in
strained GaN (wurtzite) - 1D:
strained silicon - 1D:
k||
energy dispersion of holes in unstrained and strained silicon inversion
layers - 1D: Dispersion in infinite
superlattices: Minibands - 1D: Single-band ('effective-mass') is a special case of 8x8 k.p ('8x8kp')
if the electrons are decoupled from the holes Calculating the quantum mechanical
density within the single-band approximation and 8x8 k.p
self-consistently Calculation of the quantum mechanical
density from the k.p dispersion (no self-consistency) - 1D:
n-i-n Si resistor - 1D:
Triangular
well - 1D: Double quantum well - 1D:
Quantum Confined Stark Effect -
1D: Exciton correction in
1D quantum wells - 1D:
Quantum Cascade
Laser - 1D: Intraband
transitions - 1D:
Schrödinger-Poisson - 1D:
pn-junction - BIO-1D:
Electrolyte Gate AlGaN/GaN Field Effect Transistor
as pH Sensor - BIO-1D: Si-SiO2 electrolyte sensor - BIO-1D:
Detection of proteins with a SOI (silicon-on-insulator) electrolyte sensor - 2D:
Quantum corral - 2D:
Double Gate MOSFET (Metal
Oxide Semiconductor Field Effect Transistor) - 2D:
I-V characteristics of an n-doped and
n-i-n-doped Si
structure - 2D:
Hole wave functions in a quantum wire
subjected to a magnetic field - 1D/2D: I-V characteristics of an n-doped GaN single layer (available on request,
contact:
stefan.birner@nextnano.de) - 2D:
Electron and hole wave functions in
a T-shaped quantum wire grown by CEO (cleaved edge overgrowth) - 2D:
Electron and hole wave functions in
a strained T-shaped quantum wire grown by CEO (cleaved edge overgrowth) - 3D:
Cubic and cuboidal shaped
quantum dots - 3D: Hexagonal shaped GaN quantum dot embedded in AlN
(wurtzite) - 3D: Exciton correction in
idealistic 3D cubic quantum dots - 3D:
Energy levels in a
pyramidal shaped InAs/GaAs quantum dot including strain and piezoelectric
fields
- 12-Mar-2004
A new nextnano³ version is available for
download: nextnano3_2004_08_24
- 08-Apr-2004
A new 1D tutorial was added:
GaN/AlN wurtzite structure: Strain, piezo and pyroelectric charges
in wurtzite
- 12-Mar-2004
A new nextnano³ version is available for
download: nextnano3_2004_03_12
- 24-Jan-2004
A new 1D tutorial was added:
Strain: Band shifts and splittings due to conduction and valence band
deformation potentials
- 16-Jan-2004
A new 1D tutorial was added:
Energy dispersion of holes in a quantum well
- 08-Jan-2002
Input
file generator for 1D
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