|
|
|
Overview - Basics 1Note: This documentation is nearly 10 years old and
might not be related any more to the actual version of the nextnano³
source code.
You can dowload this page as a pdf file (basics.pdf) but most of it is written in German and this file won't be updated any more. Be sure to check the online documentation for the latest version.
Contents 1 Basics 1 -Overview
1 Basics 1 - Overview1.1 Main equationsFirst, the main equations are summarized. To keep things simple, we restrict ourselves to electrons and donors and do not treat recombination terms. Holes and acceptors will be treated analogously. Furthermore the following equations refer to 1D device geometries. For the solution of the system we take a quasi-Fermi level EFn(z) which varies over space. For the density of the ionized donors and for the current hereby holds:
ND(z) is the donor density, ED is the inonization energy, gD is the degeneracy factor of the energy levels and µn(z) is the electron mobility.
Equation (1.1) is the Poisson equation. Hereby n
stands for the electron density and ND+ is the
density of the ionized donors. The 1-band Schrödinger equation
(1.2) gives the density of states for the quantized states (that have the
wave functions Psin(z) and the corresponding
eigenvalues En) whereby V(z) = Ec0(z)
- e Phi(z) is the band edge function. The electron density n(z)
which goes into the Poisson equation is obtained The current continuity equation (1.3) provides the connection between the electron density and the quasi-Fermi level. Here again, more details follow below... One realizes that the self-consistent solution of this system of equations is uniquely determined by the potential Phi(z) and the quasi-Fermi level EFn(z). Methodically, therefore, our approach is divided into two blocks.
This cycle will be repeated until self-convergence is reached. Both parts will be discussed below in more detail.
1.1.1 Boundary conditionsBoundary conditions for the Schrödinger equationFor the Schrödinger equation, Dirichlet boundary conditions are used, i.e.
and Neumann boundary conditions, i.e.
respectively. At first, the effect of these boundary conditions is studied at a shallow, one-dimensional potential function on a region of 10 nm length (see Fig. 1). With Dirichlet boundary conditions, the eigenfunctions have cosine shape as it is the case at a potential well with infinitely high walls. If one takes Neumann boundary conditions, then one obtains the same eigenvalues but the corresponding eigenfunctions are shifted by a phase of pi/2. Additionally, the eigenvalue zero occurs with a constant eigenfunction.
Fig.1: Eigenvalues of a shallow potential of 0 eV with Dirichlet and Neumann boundary conditions. The lowest Neumann eigenvalue has the value zero and thus lies exactly onto the bottom of the potential. If the potential isn't shallow but sloped in a way, then we have the situation as in Fig. 2.
Fig. 2: Eigenvalues at a sloped potential with Dirichlet and Neumann boundary conditions If one solves the Schrödinger equation only in an inner region of the device, then one can either take Dirichlet or Neumann boundary conditions. Eventually, the states are normalized to one, i.e.
This means that a fully occupied state is equivalent to exactly one electron. At contacts we are making the idealistic assumption that there exists charge neutrality and that the density of states is the same as in bulk material. With pure Dirichlet boundary conditions, however, the density would decrease to zero at contacts whereas with Neumann boundary conditions the density would increase. Thus, it is reasonable to assume something like a mixed state. Precisely, this means that we solve the Schrödinger equation once with Dirichlet and once with Neumann boundary conditions and to normalize the states to 1/2:
This can be made plausible by looking at Fig. 2. For the same eigenvalue, one obtains there once cosine and once a sine function. The sum over both is constant. As both these eigenfunctions are normalized to 1/2, the fully occupation of these mixed states again corresponds exactly to one electron.
Boundary conditions for the Poisson and current continuity equationThe solution of the Schrödinger equation (and of the Thomas-Fermi approximation at classical calculations respectively) gives the density of states for the device. This density of states will be occupied using the quasi-Fermi level. To guarantee charge neutrality, we are first solving the Poisson and Schrödinger equation self-consistently for the case of thermodynamic equilibrium with constant quasi-Fermi level EF0 whereby we require as boundary conditions at contacts: (Neumann boundary condition) This corresponds to the assumption of charge neutrality at Ohmic contacts. Then, according to Gauss' theorem the total charge is zero, i.e. the charge of the free charge carriers is equal to the charge of the ionized donors and acceptors. From this, one obtains the built-in potential. The values of this potential at the contacts Phil (left contact) and Phir (right contact) are then taken as Dirichlet boundary conditions for the calculations in nonequilibrium. Precisely, this means by applying a voltage U:
This leads to the result that the charge carrier density at an Ohmic contact at applied voltage should be equal to the charge carrier density at equilibrium. For the calculation of the built-in potential for a Schottky contact, the band edge will be pinned above the Fermi level by a Schottky barrier. This corresponds to a Dirichlet boundary condition. The calculation at applied voltage then is analogous to the one for an Ohmic contact.
1.1.2 Calculation of the potential and the densities at fixed quasi-Fermi levelWe assume that there exists a quasi-Fermi level EFn(z) which varies over space and is valid for all states. First, we are calculating the densities where the potential Phi(z) is fixed and thus the function of the band edge Ec0(z) - e Phi(z) is fixed as well. Hereby four cases have to be considered:
The densities are then calculated via a function of the potential (and thus of the quantum mechanical states). With these terms for the densities, the Poisson and Schrödinger equation are then solved self-consistently, e.g. by a predictor-corrector approach. Thus for the fixed quasi-Fermi level a new potential and new quantum states are obtained.
1.1.3 Calculation of the quasi-Fermi level at fixed potentialStarting from the Boltzmann equation we get for the current density:
Hereby µn(z) stands for the mobility of the electrons. From the solution of the current continuity equation div j = 0 one eventually gets the quasi-Fermi level EFn(z) Hereby, the charge carrier density goes into the current continuity equation. Here again, as in the previous chapters, we have to consider different cases.
1.2 General structureThe general structure is described here.
1.3 Generation of the gridThe generation of the grid is described here.
1.4 Control of the program flow via the input fileThe control of the program flow (flow-scheme) via the input file is described here.
1.5 Technical details for the states in quantum regions1.5.1 Separation of classical and quantum mechanical statesThe separation model (quantum and continuum states) is described here.
1.6 Models for density calculation in 1D, 2D and 3D
1.6.1Classical densititesOne can derive the Thomas-Fermi density as follows: The wavefunctions for propagating waves are: With one obtains for the electron density: We assume a parabolic dispersion: Summation can be transformed to integration by: Then the electron density reads:
With one gets:
We further allow for nonparabolicities by introducing a nonparabolicity factor. The nonparabolicity factor in the database has following definition: It has by definition the units alpha is dimensionless and the density now reads:
In case we have a combination of quantum and classical states one only has to calculate the classical density above an energy level (e.g. the highest bound state), which we call Eedge. As a consequence, we only have to integrate from Eedge (instead of Ec) to infinity in (eq. 1.14). Thus we get incomplete Fermi integrals:
For holes one only has to replace (EF - Ec) / kT by -(EF - Ev) / kT .
1.6.2 Density for 1-band quantum states
With the three dimensional eigenstates from the Schrödinger equation the electron density reads:
1.6.2.2 2D states (homogeneous in z direction) The quantum states are the eigenstates of the one-band Schrödinger equation. We will derive the according density for a quantum region which is homogeneous in the z direction: Due to homogeneity in z direction the wavefunctions can be separated: Then for the energies the relation holds: In general it is so the electron density reads: where f(En) denotes the Fermi function. Due to the separation the summation can be written as: Thus one obtains: Finally the density is (provided one integrates to infinity)
In general we have an energy edge Eedge which separates quantum mechanical and classical states. Here we have to integrate for the bound states from the eigenenergy of the considered state to Eedge, so: This can be written as:
1.6.2.3 1D states (homogeneous in (x, y) direction) With one dimensional wavefunctions the density is
1.6.3 Derivatives of DensitiesIn order to calculate the Newton correction for the nonlinear Poisson equation, derivatives of the densities with respect to the potential have to be calculated. Here, one makes use of the relation Note that for incomplete Fermi integrals the boundaries may depend on the potential, so one has to make use of the formula:
It is for Thus after partial integration one gets:
The Gamma function has the values:
More information on this topic can be found here.
1.6.4 k.p densities(More details about the kp densities can be found here as well.) The wave functions are given by:
The density of states is
It holds One can get rid of the functions uiuj* in the following way. When calculating the density at position (x, y, z), we mean the averaged density in the box at position (x, y, z). Furthermore, we assume that the functions uiuj* vary very rapidly, so we can separate the integral:
As boundary conditions for the k.p states, Dirichlet and periodic boundary conditions are implemented.
1.6.4.1 Evaluation of the density integration The evaluation of the density integration is describe here (method of Brillouin zone integration).
If the energy is isotropic inside the 2D Brillouin zone, i.e. E(kx,ky)=E(k||) with k||²=kx²+ky², then the integration can be reduced to a one-dimensional integration:
1.6.4.3 2D integration, discretization of k space The integration is written as follows:
1.6.4.4 Density of states integration Another possibility is to integrate over the density of states:
1.6.4.5 k.p dispersion without density integration The program chooses the maximum k vector up to which the states are
calculated automatically (see above). However, if one wants to know the
dispersion up to a given k vector, one has to specify the value in the
input file under the keyword More details about the kp densities can be found here.
1.7 Details for the interior program flow1.7.1 Rough structureThe rough program flow is described here and more detailed here.
1.7.2 Schrödinger-Poisson equationDuring this part of the program the quasi-Fermi levels that are given in the
module 'f First, for the current valid potential the quantum mechanical states are determined. From these a predictor density can be deduced. In essence, one uses a perturbation ansatz in first order, i.e. one assumes that the wave functions remain unchanged at variations of the potential and that the eigenvalues are shifted according to the potantial changes. With this predictor density, the nonlinear Poisson equation will be solved and thereby a new (corrected) potential is obtained. From this, one can immediately determine the new eigenstates aso. This procedure will be repeated until convergence. The outer cycle is situated in the subroutine ' More information is available for the nonlinear Poisson equation (section inside the Poisson block) and for the calculation of the eigenstates.
1.7.3 Calculation of multi-band k.p statesThe calculation of the eigenstates is controlled centrally by the sub program
' More details can be found here.
1.7.4 LimitationsIn this version, nextnano3 is treating all material types in the same way. This means specifically that the Input parser requires the full parameters even for metals and air and even if they don't contribute to the calculation (e.g. the metal could be defined additionally as a Poisson region which represents an Ohmic contact and thus appearing in the Poisson and Schrödinger equation only as a contact). For the k.p Hamiltonian up to now only Dirichlet and periodic boundary conditions are implemented. If one wants to calculate the current with full quantum mechanical density, one should use the 1-band Schrödinger equation instead. Mobility models are implemented but no recombination terms so far. Particularly, for a nonequilibrium calculation, contacts have to be specified on both ends in order to allow current flow. (If not, no current can flow because of current conservation.) For the solution of eigenvalue problems,
LAPACK library
routines are used which are specified in the MODULE
Please go to Basics 2 to continue reading! |
| ||||||||