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electronics
Features
  • self-consistent Schrödinger, Poisson and current equations
  • 1D, 2D, 3D
  • Si, SiGe, GaAs, AlGaAs, ...
Tutorials
RTD
Resonant Tunneling Diode - I-V characteristic calculated with a nonequilibrium Green's function approach (NEGF)
T. Kubis, P. Vogl, Journal of Computational Electronics (2006)

Doping
Doped semiconductors - Charge carrier concentration as a function of temperature in Si, Ge, GaAs

1D MOSFET
p-Si / SiO2 / poly-Si structure (MOSFET with inversion channel due to applied gate voltage)

strained silicon (bulk)
k.p dispersion in bulk, biaxially strained and uniaxially strained Si

Si inversion channels
k|| dispersion of holes in unstrained and strained silicon inversion layers

Si/SiGe heterostructures
Si/SiGe MODQW (Modulation Doped Quantum Well)


bulk Si devices
n-i-n Si resistor (1D)
I-V curve of an n-doped Si structure (2D)

Double Gate MOSFETs
DGMOS Structure 1 - Double Gate MOSFET (2D)
(Metal Oxide Semiconductor Field Effect Transistor) DGMOS Structure 2 - Double Gate MOSFET (2D)
(including quantum mechanics)

Triple Gate MOSFET
Electron wavefunctions of a 2D slice of a Triple Gate MOSFET (2D)

Monte Carlo
At present, we do not have any tutorials yet for Monte Carlo simulations.
If you are interested in such topics, please contact stefan.birner [at] nextnano.de.
We are looking for research partners in that field.

Further tutorials
Complete list of all tutorials

Flyer

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